{"id":23469,"date":"2025-04-12T10:53:54","date_gmt":"2025-04-12T02:53:54","guid":{"rendered":"https:\/\/www.meetyoucarbide.com\/?p=23469"},"modified":"2025-04-14T09:53:21","modified_gmt":"2025-04-14T01:53:21","slug":"grain-growth-inhibitors-of-cemented-carbide","status":"publish","type":"post","link":"https:\/\/www.meetyoucarbide.com\/ru\/grain-growth-inhibitors-of-cemented-carbide\/","title":{"rendered":"\u041f\u043e\u043d\u0438\u043c\u0430\u043d\u0438\u0435 \u0438\u043d\u0433\u0438\u0431\u0438\u0442\u043e\u0440\u043e\u0432 \u0440\u043e\u0441\u0442\u0430 \u0437\u0435\u0440\u043d\u0430: \u043a\u043b\u044e\u0447 \u043a \u043e\u043f\u0442\u0438\u043c\u0438\u0437\u0430\u0446\u0438\u0438 \u043f\u0440\u043e\u0438\u0437\u0432\u043e\u0434\u0438\u0442\u0435\u043b\u044c\u043d\u043e\u0441\u0442\u0438 \u0442\u0432\u0435\u0440\u0434\u043e\u0433\u043e \u0441\u043f\u043b\u0430\u0432\u0430"},"content":{"rendered":"
<\/p>\n
The grain growth inhibitors primarily influence WC grain growth through the following approaches:<\/p>\n
Principle:grain growth Inhibitor elements (e.g., V, Cr) dissolve into the WC or Co phase, adsorb at WC\/Co phase boundaries or WC\/WC grain boundaries, hindering atomic diffusion and grain boundary migration.<\/p>\n
Inhibitors such as VC and Cr\u2083C\u2082 decompose during sintering, with V and Cr atoms dissolving into the WC lattice or Co binder phase.<\/p>\n
Example: V substitutes W sites in WC (forming (V,W)C solid solution), while Cr dissolves into the Co phase (forming (Co,Cr) solid solution).<\/p>\n
Solute atoms (e.g., V, Cr) enrich at WC grain boundaries or WC\/Co interfaces, forming a “solute atmosphere.”<\/p>\n
These segregated atoms pin grain boundaries, increasing the energy barrier for migration.<\/p>\n
When grain boundaries attempt to migrate, solute atoms must move along, but their slower diffusion rate impedes boundary motion.<\/p>\n
Analogous to “viscous drag,” this suppresses WC grain coalescence and growth.<\/p>\n
Applicable grain growth Inhibitors: VC, Cr\u2083C\u2082 (primarily rely on solute drag).<\/p>\n
<\/p>\n
Principle: grain growth inhibitors form nanoscale carbide particles (e.g., (V,W)C, (Cr,W)C) that physically obstruct WC grain growth at boundaries.<\/p>\n
During sintering, decomposed VC or Cr\u2083C\u2082 reprecipitate as nanoscale carbides (e.g., 5\u201350 nm (V,W)C particles), typically located at WC\/WC or WC\/Co interfaces.<\/p>\n
Migrating boundaries must overcome the restraint of these nanoparticles, requiring additional energy.<\/p>\n
According to the Zener equation, pinning force (F\u209a) correlates with particle volume fraction (f) and size (r). Finer, denser particles yield stronger inhibition.<\/p>\n
<\/p>\n
Nanoparticles hinder WC dissolution in liquid Co and redeposition, reducing Ostwald ripening (“large grains consuming small ones”).<\/p>\n
Applicable grain growth Inhibitors: VC (strongest pinning), Cr\u2083C\u2082 (moderate), TaC\/NbC (weaker).<\/p>\n
<\/p>\n
Mechanism<\/b><\/strong><\/td>\nPrimary Inhibitors<\/td>\n | Key Characteristics<\/td>\n<\/tr>\n | Solute Drag<\/td>\n | VC, Cr\u2083C\u2082<\/td>\n | Hinders grain boundary migration through solute atom segregation<\/td>\n<\/tr>\n | Second-Phase Pinning<\/td>\n | VC, Cr\u2083C\u2082<\/td>\n | Physically blocks grain boundaries via nanoparticle dispersion (Zener pinning)<\/td>\n<\/tr>\n | Dissolution-Reprecipitation Control<\/td>\n | VC, Cr\u2083C\u2082<\/td>\n | Reduces WC dissolution in Co binder and slows atomic diffusion<\/td>\n<\/tr>\n | Grain Boundary Energy Modification<\/td>\n | TaC, NbC<\/td>\n | Lowers grain boundary energy, enhancing high-temperature stability<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n | <\/p>\n Selection and Optimization of grain growth Inhibitors<\/h1>\n |